Raman studies of heavily implanted, dye-laser-annealed GaAs

Raman scattering is used to study the annealing behavior produced by 10 nsec, 565 dye laser pulses in high dose ion-implanted GaAs. Samples were prepared with Sn and Cd implantations of 2, 5, and 10 x 1015/cm2. The Raman spectra indicate that the threshold for epitaxial growth lies between 0.2 - 0.3 J/cm2. Best carrier activation (approx. 2%), however, is achieved at approx. 1.6 J/cm2 for the Sn-implanted sample (n-type). For Cd implantation the electrical activation appears to be very high (< or approx. 50%) for low pulse energies (< or approx. 0.3 J/cm2) but decreases for higher pulse energies. (author)