Published 1998 | Version v1
Miscellaneous Metadata-only

Surface morphology of MBE-grown GaN on GaAs(001) as a function of the N/Ga-ratio

Creators

  • 1. Chalmers University of Technology, Goeteborg (Sweden)

Description

no abstract available

Part of:
Abstracts of The Third European GaN Workshop EGW-3

Additional details

Publishing Information

Imprint Title
Abstracts of The Third European GaN Workshop EGW-3
Imprint Pagination
97 p.
Journal Page Range
p. 21

Conference

Title
3. European GaN Workshop EGW-3
Dates
22-24 Jun 1998
Place
Warsaw (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
31064537
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ATOMIC FORCE MICROSCOPY; CHEMICAL COMPOSITION; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; GALLIUM NITRIDES; LAYERS; MEETINGS; MOLECULAR BEAM EPITAXY; ROUGHNESS; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACE PROPERTIES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON MICROSCOPY; EPITAXY; GALLIUM COMPOUNDS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SCATTERING; SURFACE PROPERTIES

Optional Information