Published September 2001 | Version v1
Journal article Metadata-only

Transient characteristics of MOS thyristors irradiated by electrons

Creators

  • 1. Inst. Fiziki Poluprovodnikov SO RAN, Novosibirsk (Russian Federation)

Description

The MOS controlled thyristor (MCT) are designed and fabricated. Their static and dynamic characteristics are studied. The influence of electron irradiation on static and dynamic characteristics are investigated. It is found that electron irradiation can sufficiently decrease the switch-off time of MCT. It has been also observed an increase in the controlled current density

Abstract (Russian)

Представлены результаты разработки и изготовления МОП-управляемых тиристоров. Изучены их статические и динамические характеристики. Исследовано влияние облучения электронами на статические и динамические характеристики. Обнаружено, что облучение электронами существенно уменьшает время выключения МОП-управляемого тиристора. Также наблюдалось увеличение плотности управляемого тока

Additional details

Additional titles

Original title (Russian)
Переходные характеристики MOP тиристоров, облученных электронами

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
35
Journal Issue
9
Journal Page Range
p. 1154-1158
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
34010371
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ELECTRIC CONDUCTIVITY; ELECTRICAL TRANSIENTS; ELECTRON BEAMS; EQUIVALENT CIRCUITS; MOSFET; PHYSICAL RADIATION EFFECTS; PULSE RISE TIME; THYRISTORS
Descriptors DEC
BEAMS; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; FIELD EFFECT TRANSISTORS; LEPTON BEAMS; MOS TRANSISTORS; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TIMING PROPERTIES; TRANSIENTS; TRANSISTORS; VOLTAGE DROP

Optional Information

Notes
12 refs., 6 figs.