Published September 14, 2009 | Version v1
Journal article Metadata-only

Giant Hall effect in (GaAs)Fe granular films

Creators

  • 1. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)
  • 2. Laboratorium voor Vaste-Stoffysica en Magnetisme and IKS KULeuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium)
  • 3. Institute of Mechanical Engineering and Material Department, Nanjing University of Science and Technology, Nanjing 210094 (China)
  • 4. Physics Department of Southeast University, Nanjing 211189 (China)

Description

A series of (GaAs)1-xFex (x: volume fraction) films with Fe granules embedded in GaAs matrix were prepared by magnetron sputtering. Hall Effect of the films was characterized. The largest saturated Hall resistivity of 17.3 μΩcm was observed in (GaAs)30Fe70 film at room temperature, which is over 2 orders larger than that of pure Fe, about 1 order larger than that of (NiFe)-(Al2O3) and (NiCo)-(SiO2) granular films prepared under the same preparation conditions, and 150% larger than that of Ge30Fe70.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physleta.2009.07.062

Additional details

Identifiers

DOI
10.1016/j.physleta.2009.07.062;
PII
S0375-9601(09)00914-1;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
373
Journal Issue
38
Journal Page Range
p. 3495-3497
ISSN
0375-9601
CODEN
PYLAAG

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41107606
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM OXIDES; GALLIUM ARSENIDES; HALL EFFECT; MAGNETRONS; MATRIX MATERIALS; SILICON OXIDES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; GALLIUM COMPOUNDS; MATERIALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; SILICON COMPOUNDS; TEMPERATURE RANGE

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.