Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2–rGO hybrid

With the growing demand for wearable electronic devices in recent years, flexible memory devices have attracted great interest among researchers. Here we report a flexible resistive memory device based on a hybrid of MoS₂ and reduced graphene oxide (rGO). The device shows not only a low operating voltage (about 0.4 V), but also multilevel states by controlling the compliance current. In addition, it exhibits long retention time, high repeatability, and bending endurance. Further analysis indicates that the resistive-switching phenomenon can be attributed to the effect of electron trapping and de-trapping in the MoS₂–rGO heterojunction. Our findings suggest that the MoS₂–rGO hybrid has the potential to be applied in flexible, low-power, and high-density nonvolatile memory.