Published December 2006 | Version v1
Journal article

Integrated optical proximity microsensor

  • 1. National Institute for Research and Development in Microtechnologies-IMT, 32 Erou Iancu Nicoale Street, 077190 Bucharest (Romania)
  • 2. Vienna University of Technology, Institute of Sensor and Actuator Systems, Floragasse 7/E366, A 1040 Vienna (Austria)

Description

This paper presents the design, simulation and experimental results of an integrated proximity sensor manufactured on silicon substrate. The sensor was designed for microrobotic applications like integration into a microgripper arm or detection of the position of gripper arms relative to an object. The structure is based on an SU8 polymeric optical waveguide splitted into three arms, integrated with a multielement photodetector on silicon substrate. Each element of the photodetector is a metal-semiconductor-metal (MSM) photodiode with Ti/Al Schottky interdigitated electrodes. The operation principle of this sensor consists in the light coupling in the central arm of the optical waveguide, interaction with the object (reflection) of the radiation which exits from this principal arm, the coupling of the 'affected' radiation which comes back through the end of the waveguide and its splitting into three arms of the optical waveguide. From the optical waveguide, the light is coupled in photodiode and the photogenerated carriers are collected to the electrodes giving the electrical signal which is read and processed in real time. The optimal parameters of the waveguide (width, thicknesses of the core and the claddings) of the photodetector and the coupling between them were defined by simulation, using FDTD and BeamProp method (Opti FDTD software). Our microsensor can detect the position of an object in the range of 0-300 μm, as position sensor and with high precision in the range of zero to twice the wavelength, as proximity sensor

Additional details

Identifiers

DOI
10.1016/j.jlumin.2006.08.065;
PII
S0022-2313(06)00597-7;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
121
Journal Issue
2
Journal Page Range
p. 394-398
ISSN
0022-2313
CODEN
JLUMA8

Conference

Title
Symposium D, Silicon-based photonics
Acronym
E-MRS 2006
Dates
29 May - 2 Jun 2006
Place
Nice (France)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38034735
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ACCURACY; CARRIERS; CLADDING; COMPUTER CODES; COUPLING; ELECTRODES; METALS; OPTICAL REFLECTION; SEMICONDUCTOR MATERIALS; SILICON; SIMULATION; SUBSTRATES; THICKNESS; WAVEGUIDES
Descriptors DEC
DEPOSITION; DIMENSIONS; ELEMENTS; MATERIALS; REFLECTION; SEMIMETALS; SURFACE COATING

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.