Published 1990 | Version v1
Book Metadata-only

Improved hole diffusion lengths in bulk n-type GaAs for high efficiency solar cells

Creators

  • 1. Dept. of Electrical and Computer Engineering, Carnegie Mellon Univ., Pittsburgh, PA (USA)

Description

A method for wafer annealing which is effective in suppressing defects and raising minority carrier diffusion lengths in n-type bulk GaAs is described. The beneficial effect of the annealing is shown to be associated with the proximity surface with measurements of photoresponse as a function of depth. The concentration of the hole trap HCX (EV + 0.29 eV) varies as a function of depth from the surface, qualitatively, as might be expected of the concentration of the dominant recombination center in the material. The impact of improving the material in this manner on the performance of Zn diffused solar cells is demonstrated

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
1-55899-051-8
Imprint Title
Impurities, defects and diffusion in semiconductors
Imprint Pagination
1050 p.
Journal Page Range
p. 997-1000.

Conference

Title
Materials Research Society fall meeting.
Dates
27 Nov - 2 Dec 1989.
Place
Boston, MA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22015660
Subject category
S36: MATERIALS SCIENCE; S74: ATOMIC AND MOLECULAR PHYSICS; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; DIFFUSION; GALLIUM ARSENIDES; HOLE MOBILITY; MATERIALS TESTING; N-TYPE CONDUCTORS; PENETRATION DEPTH; PERFORMANCE; PHOTOCONDUCTIVITY; SOLAR CELLS; ZINC
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; DIRECT ENERGY CONVERTERS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; GALLIUM COMPOUNDS; HEAT TREATMENTS; MATERIALS; METALS; MOBILITY; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR MATERIALS; TESTING

Optional Information

Secondary number(s)
CONF-891119--.