Published September 2007
| Version v1
Journal article
Temperature-dependent correlation of magnetic anisotropy and magnetization in Fe monolayers on {4x6}GaAs(001)
Creators
- 1. Fachbereich Physik, Experimentalphysik-AG Farle, Universitaet Duisburg-Essen, Lotharstr. 1, 47048 Duisburg (Germany)
Description
The temperature dependence of the magnetic anisotropy and the magnetization of 2-40 monolayers of Fe ultra-thin films grown by molecular beam epitaxy on {4x6}GaAs(001) at room temperature has been investigated by means of in situ ferromagnetic resonance and in situ scanning superconducting quantum interference device magnetometry in ultrahigh vacuum at 400)=1.26+/-0.1x10-3J/m2 (649+/-51.5μeV/atom) and K2perpendicularv(T->0)=4+/-9x104J/m3 (3+/-7μeV/atom). A magneto-elastic model, which accounts for the measured effects is presented
Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2007.02.140;
- PII
- S0304-8853(07)00256-9;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 316
- Journal Issue
- 2
- Journal Page Range
- p. e334-e337
- ISSN
- 0304-8853
- CODEN
- JMMMDC
Conference
- Title
- Joint European magnetic symposia
- Dates
- 26-30 Jun 2006
- Place
- San Sebastian (Spain)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39033036
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANISOTROPY; EXTRAPOLATION; FERROMAGNETIC RESONANCE; GALLIUM ARSENIDES; INTERFACES; IRON; MAGNETIZATION; MOLECULAR BEAM EPITAXY; SQUID DEVICES; SURFACES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTRONIC EQUIPMENT; ELEMENTS; EPITAXY; EQUIPMENT; FILMS; FLUXMETERS; GALLIUM COMPOUNDS; MAGNETIC RESONANCE; MATHEMATICAL SOLUTIONS; MEASURING INSTRUMENTS; METALS; MICROWAVE EQUIPMENT; NUMERICAL SOLUTION; PNICTIDES; RESONANCE; SUPERCONDUCTING DEVICES; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.