Strip defect recognition in electrical tests of silicon microstrip sensors
Creators
Description
This contribution describes the measurement procedure and data analysis of AC-coupled double-sided silicon microstrip sensors with polysilicon resistor biasing. The most thorough test of a strip sensor is an electrical measurement of all strips of the sensor; the measured observables include e.g. the strip's current and the coupling capacitance. These measurements are performed to find defective strips, e.g. broken capacitors (pinholes) or implant shorts between two adjacent strips. When a strip has a defect, its observables will show a deviation from the "typical value". To recognize and quantify certain defects, it is necessary to determine these typical values, i.e. the values the observables would have without the defect. As a novel approach, local least-median-of-squares linear fits are applied to determine these "would-be" values of the observables. A least-median-of-squares fit is robust against outliers, i.e. it ignores the observable values of defective strips. Knowing the typical values allows to recognize, distinguish and quantify a whole range of strip defects. This contribution explains how the various defects appear in the data and in which order the defects can be recognized. The method has been used to find strip defects on 30 double-sided trapezoidal microstrip sensors for the Belle II Silicon Vertex Detector, which have been measured at the Institute of High Energy Physics, Vienna (Austria).
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nima.2016.06.092Additional details
Identifiers
- DOI
- 10.1016/j.nima.2016.06.092;
- PII
- S0168-9002(16)30656-8;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 845
- Journal Page Range
- p. 185-188
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- Vienna Conference on Instrumentation
- Acronym
- VCI 2016
- Dates
- 15-16 Feb 2016
- Place
- Vienna (Austria)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48090371
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AUSTRIA; CAPACITANCE; CAPACITORS; DATA ANALYSIS; DEFECTS; IMPLANTS; QUALITY ASSURANCE; RESISTORS; SENSORS; SI MICROSTRIP DETECTORS; SILICON
- Descriptors DEC
- DATA PROCESSING; DEVELOPED COUNTRIES; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; EUROPE; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; PROCESSING; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS; SI SEMICONDUCTOR DETECTORS; WESTERN EUROPE
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.