Published February 2003
| Version v1
Journal article
Growth of room-temperature 1.32-μm-emitting InAs quantum dots using (GaAs/InAs) Quasi-monolayers
Creators
- 1. Yeungnam Univ., Gyeongsan (Korea, Republic of)
- 2. KRISS, Daejeon (Korea, Republic of)
- 3. Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of)
- 4. Kyungpook National Univ., Daegu (Korea, Republic of)
- 5. Inje Univ., Gimhae (Korea, Republic of)
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 42
- Journal Issue
- 2
- Series
- 14 refs, 3 figs
- Journal Page Range
- p. 237-240
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 35029044
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; INDIUM ARSENIDES; MAGNETIC ANALYZERS; OPTICAL PROPERTIES; QUANTUM DOTS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAM ANALYZERS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PHYSICAL PROPERTIES; PNICTIDES