Published August 27, 2010 | Version v1
Journal article

Crystal growth, structural perfection, phase transition, optical, and etching studies of doped glycine phosphite ferroelectric single crystals

  • 1. Crystal Growth Centre, AnnaUniversity Chennai, Chennai 600025 (India)
  • 2. Crystal Growth and Crystallography Section, National Physical Laboratory, CSIR, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

Description

Glycine phosphite (GPI) single crystal was doped with complexing agent allylthiourea, rare-earth, and metal ions (cesium and iron). The dopant concentrations were varied between 1 and 3 mol%. Influence of the dopants on the structural perfection was studied using the X-ray diffraction method. Effects of the dopants on the phase transition temperature were examined using the impedance analytical method. The optical properties of the as-grown crystals were studied using a UV spectrophotometer. The surface morphology and the presenting defects were also studied by the chemical etching method and the obtained results have been presented.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jallcom.2010.06.043

Additional details

Identifiers

DOI
10.1016/j.jallcom.2010.06.043;
PII
S0925-8388(10)01440-4;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
505
Journal Issue
1
Journal Page Range
p. 268-272
ISSN
0925-8388
CODEN
JALCEU

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.