Differential Mode Conducted EMI Prediction in Three Phase SiC Inverters

With the application of Silicon carbide (SiC) power MOSFETs in three phase inverters, higher level electromagnetic interference (EMI) produced. Thus, it is more urgent to predict EMI level in the design phase. This paper describes a frequency-domain approach to predict differential mode(DM) EMI of three phase SiC inverters. Both noise path and DM noise source are modeled. The calculated result is compared with experimental result and they agree well with each other. It is indicated that the proposed method with accurate noise and path modeling is an effective method for DM prediction of the system. (paper)