The development of MEMS device packaging technology using proton beam

Wafer-bonding techniques are key issues for the commercialization of MEMS(MicroElectroMechanical Systems) devices. The anodic bonding method and the wafer direct-bonding method are well-known major techniques for wafer bonding. Due to the anodic bonding method includes high voltage processes above 1.5 kV, the MEMS devices can be damaged during the bonding process or malfunctioned while long-term operation. On the other hand, since the wafer direct-bonding method includes a high temperature processes above 1000 .deg. C, temperature-sensitive materials and integrated circuits will be damaged or degraded during the bonding processes. Therefore, high-temperature bonding processes are not applicable for fabricating or packaging devices where temperature-sensitive materials exist. During the past few years, much effort has been undertaken to find a reliable bonding process that can be conducted at a low temperature. Unfortunately, these new bonding processes depend highly on the bonding material, surface treatment and surface flatness. In this research, a new packaging method using proton beam irradiation is proposed. While the energy loss caused in an irradiated material by X-rays or electron beams decreases with the surface distance, the energy loss caused by proton beams has a maximum value at the Bragg peak. Thus, the localized energy produced at the Bragg peak of the proton beams can be used to bond pyrex glass on a silicon wafer, so the MEMS damage is expected to be minimized. The localized heating caused by as well as the penetration depth, or the proton beam has been investigated. The energy absorbed in a stack of pyrex glass/silicon wafers due to proton-beam irradiation was numerically calculated for various proton energies by using the SRIM program. The energy loss was shown to be sufficiently localized at the interface between the pyrex glass and the silicon wafer. Proton beam irradiation was performed in the common environment of room temperature and atmospheric pressure using 8, 13 MeV of proton beam energy, current ranging from 1 μA to 20 μA. which proton beam energy is transported to maximum in bonding interface when thickness of pyrex glass is 0.5, 1 mm. The size of Si wafer and the pyrex glass were 1 cm x 1 cm respectively. Thickness were 650 μm-(Si) and 1 mm-(Pyrex). In our experiments, pyrex glass to Si wafer bonding are successfully achieved without extra heating or electric fields