Study on different channels of electron-energy relaxation in InSb in magnetic fields up to 50 kOe at low temperatures

Neutral donor impurities emerging in n-InSb type semiconductors in quantized magnetic field due to electron magnetic freezing effect open a new channel of free electron energy relaxation connected with collision excitation and nonradiative de-excitation of such donor centres. Efficiency of various channels of electron energy relaxation under similar conditions is estimated. Experiments carried out on n-InSb at n approximately 1015 cm-3 and T approximately 4.2 K in fields up to 50 kOe make it possible to determine times characterizing the processes of electron-phonon (10-8-10-9 c), electron-impuritive (approximately 10-7 c) and phonon-boundary (approximately 10-6 at sample dimensions approximately 1 mm) interactions