Published February 8, 2000
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Electrical breakdown in thin oxides during bias-temperature ramps
Description
Electrical breakdown in thin oxides is assessed by a new bias-temperature ramp technique. No significant effect of radiation exposure on breakdown is observed for high quality thermal and nitrided oxides, up to 20 Mrad(SiO2)
Availability note (English)
Available from INIS in electronic form; Also available from OSTI as DE00751183; PURL: https://www.osti.gov/servlets/purl/751183-56UUDJ/webviewable/Files
31049958.pdf
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Additional details
Identifiers
Publishing Information
- Imprint Pagination
- 7 p.
- Report number
- SAND--2000-0364C
Conference
- Title
- 2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC)
- Dates
- 24-28 Jul 2000
- Place
- Reno, NV (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 31049958
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BREAKDOWN; OXIDES; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DEVICES
- Descriptors DEC
- CHALCOGENIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS
Optional Information
- Contract/Grant/Project number
- AC04-94AL85000
- Funding organization
- US Department of Energy (United States)