Defect analysis in semiconductors by dechanneling

RBS (Rutherford backscattering spectrometry) combined with channeling technique provides information about crystal defects. The analysis of the RBS data with an improved method based on a master equation approach of dechanneling is briefly discussed and applied to the investigation of point defects with preferred positions in the lattice cell. The main idea is to measure and evaluate the RBS data for different target temperatures. As examples point defects in silicon and GaAs introduced by ion implantation are considered. (author) 10 refs., 4 figs