Electron Microscopy investigation of Sb_2-xBi_xTe₃ hexagonal crystal structure growth prepared from sol–gel method

Sb – Bi – Te ternary compounds, with ZT values (unitless figure of merit for semiconductor materials) as high as 1.28, have long been known as the best thermoelectric materials for use in thermoelectric cooling and power generation operated near room temperature. In this research, p-type Sb_2-xBi_xTe₃ (x = 0, 0.2, 0.4, 0.6, 0.8, and 1.0) compounds were synthesized by sol–gel method using bismuth (III) acetate, antimony (III) acetate and tellurium dioxide as precursors. The mole ratio of metal precursor: solvent: organic solvent was 1:60:4. The obtained gels of Sb_2-xBi_xTe₃ were annealed to complete the synthesis at 773 K for 2 h under nitrogen atmosphere. Sb₂Te₃, Sb_1.6Bi_0.4Te₃, and SbBiTe₃ compounds were observed by X-ray Diffraction (XRD) as main phases in samples with x = 0–0.2, 0.4–0.6, and 0.8–1.0, respectively. An increase in the lattice parameter a suggested an expansion of unit cells, due to the substitution of Bi in Sb crystallographic positions. The morphology, as revealed by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) images, is one of aligned hexagonal nanosheets, while the Selected Area Diffraction (SAD) patterns matched well with the phases characterized by XRD. - Highlights: • Sb_2-xBi_xTe₃ (x = 0.0–1.0) hexagonal nanosheets were prepared by sol–gel method. • It is the simple and economic method with the first time reported for these structures. • High crystallinity hexagonal nanosheets were oriented into small bundles form. • It is expected to have a high ZT value at room temperature.