Published 1996 | Version v1
Book

Deposition of lead-silicate glassy thin coatings by RF magnetron sputtering: Correlation between deposition parameters and electrical and structural properties

  • 1. Univ. di Padova (Italy)
  • 2. INFN, Legnaro (Italy). Lab. Nazionali di Legnaro (Italy)
  • 3. Univ. di Trento, Mesiano (Italy). Dipt. di Ingegneria dei Materiali
  • 4. INFN, Legnaro (Italy). Lab. Nazionali di Legnaro

Description

Lead-silicate glassy thin films produced by means of Reactive Radio Frequency Magnetron Sputtering have found recent application in the development of MicroStrip Gas Chambers radiation detectors. Here, thin films (100--400 nm) of lead silicate glass have been deposited by RF magnetron sputtering in Ar plasma at different discharge conditions. The interaction of the sputtered species with the gas atoms during the transport process through the discharge region and the kinetics of growth of the films have been investigated as a function of the target composition and of the substrate temperature. This study demonstrates the possibility of controlling the surface electrical resistance of the films in a wide range of values ranging from 1012 to 1017 Ω/□ during the film growth

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (United States)
ISBN
1-55899-299-5
Imprint Title
Ion-solid interactions for materials modification and processing
Imprint Pagination
923 p.
Series
Materials Research Society symposium proceedings, Volume 396.
Journal Page Range
p. 285-290.

Conference

Title
Fall meeting of the Materials Research Society (MRS).
Dates
27 Nov - 1 Dec 1995.
Place
Boston, MA (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
28048872
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
ELECTRIC CONDUCTIVITY; EXPERIMENTAL DATA; LEAD SILICATES; RADIATION DETECTORS; SPUTTERING; SURFACE COATING
Descriptors DEC
DATA; DEPOSITION; ELECTRICAL PROPERTIES; INFORMATION; LEAD COMPOUNDS; MEASURING INSTRUMENTS; NUMERICAL DATA; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SILICATES; SILICON COMPOUNDS

Optional Information

Secondary number(s)
CONF-951155--.