Drift barriers in n-Si(Cz) after irradiation fast neutrons of a reactor in dependence from fluence, the temperature of measuring and annealing

Drift barriers in n-Si(Cz) after irradiation fast neutrons of a reactor in dependence from fluence, the temperature of measuring and annealing. The area of temperatures of diffuse and drift movement electrons in n-Si, grown up by Czochralski method, after irradiation fast neutrons of a reactor is considered. Temperature dependencies of carrier concentrations in a conducting matrix and in volume of samples are described and the drift barriers determining their specific resistance are calculated. Within the limits of the specified model of the effective environment temperature dependence of specific resistance n-Si (ρ₀ = 40 Ω·cm) after an irradiation is described by fast neutrons of a reactor. It is shown that the account of drift barriers and defects recharges in the space-charge areas of defect clusters describes temperature dependence of specific resistance more precisely. It is confirmed that scattering of carriers on the charged defects and clusters at the account of drift barriers defines temperature dependence of mobility electrons in n-Si. Amendment Herring C. for mobility of electrons is specified at them diffuse movement in n-type silicon irradiated by reactor fast neutrons. It is specified by formula average concentration of carriers in the sample, determined from Hall effect measurements. (authors)