Published December 2010
| Version v1
Journal article
The synthesis and photoluminescence of 3C-SiC nanorods
- 1. Institute of Materials Science, VAST, Hanoi (Viet Nam)
Description
The 3C-SiC nanorods were grown by using carbonthermal reduction of SiO2 without any catalyst. The intensive broad photoluminescence peak around 480-500 nm was observed at room temperature. The 3C-SiC nanorods with green - blue emitting light may have great application in display devices and light emitting diodes. (author)
Additional details
Publishing Information
- Journal Title
- Communications in Physics
- Journal Volume
- 20
- Journal Issue
- 4
- Series
- Published by the Vietnameses Academy of Science and Technology
- Journal Page Range
- p. 365-369
- ISSN
- 0868-3166
INIS
- Country of Publication
- Viet Nam
- Country of Input or Organization
- Viet Nam
- INIS RN
- 42094946
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CATALYSTS; DISPLAY DEVICES; LIGHT EMITTING DIODES; NANOSTRUCTURES; PEAKS; PHOTOLUMINESCENCE; REDUCTION; SILICA; SILICON CARBIDES; SILICON OXIDES; SYNTHESIS; TEMPERATURE RANGE 0273-0400 K; VISIBLE RADIATION
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; COMPUTER OUTPUT DEVICES; COMPUTER-GRAPHICS DEVICES; ELECTROMAGNETIC RADIATION; EMISSION; LUMINESCENCE; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SILICON COMPOUNDS; TEMPERATURE RANGE
Optional Information
- Notes
- 4 figs., 10 refs.