Published November 1, 1974
| Version v1
Journal article
Effect of lattice transformation on the pressure dependence of T/sub c/ of V3Si single crystals
Creators
- 1. Department of Physics, Cleveland State University, Cleveland, Ohio 44115
Description
The superconducting transition temperature T_c has been measured under hydrostatic pressure up to 18 kbar on both transforming and nontransforming V₃Si single crystals. dT_c/dp was found to be always positive, but about 30% smaller for the nontransforming samples. The results are compared with predictions based on previous elastic-modulus measurements under pressure.
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 10
- Journal Issue
- 9
- Series
- Phys. Rev., B.
- Journal Page Range
- 4030-4032
- ISSN
- 0556-2805
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 6174916
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CRYSTAL-PHASE TRANSFORMATIONS; PRESSURE DEPENDENCE; SILICON ALLOYS; SUPERCONDUCTIVITY; TRANSITION TEMPERATURE; VANADIUM ALLOYS; VERY HIGH PRESSURE
- Descriptors DEC
- ALLOYS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; THERMODYNAMIC PROPERTIES
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent