Published 2004 | Version v1
Miscellaneous Metadata-only

Influence of low-energy ion-beam treatment by hydrogen on electrical activity of grain boundaries in polycrystalline silicon

Creators

  • 1. Al-Balqa University, Salt (Jordan)
  • 2. Belarussian University, Minsk (Belarus)
  • 3. Lublin University of Technology, Lublin (Poland)

Description

no abstract available

Part of:
Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004

Additional details

Publishing Information

Imprint Title
Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004
Imprint Pagination
257 p.
Journal Page Range
p. 44

Conference

Title
5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004
Dates
14-17 Jun 2004
Place
Kazimierz Dolny (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
36060044
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ANNEALING; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; HYDROGEN IONS; HYDROGENATION; ION BEAMS; POLYCRYSTALS; SILICON; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; TIME DEPENDENCE
Descriptors DEC
BEAMS; CHARGED PARTICLES; CHEMICAL REACTIONS; CRYSTAL STRUCTURE; CRYSTALS; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; IONS; MICROSTRUCTURE; PHYSICAL PROPERTIES; SEMIMETALS; TEMPERATURE RANGE

Optional Information