Ionization-enhanced crystallization of phosphorus implanted silicon layers

The influence of ionization density on the annealing properties of silicon layers implanted with 1.2 x 1014 to 1 x 1015 cm-2 of phosphorus ions has been studied. The ionization background was created by high energy electrons from a Van de Graaf accelerator with the beam density on a sample in the range of 2.5 to 25 μA/cm2. The dependence of the crystallization growth rate vsub(g) on the e-h recombination rate has been observed. An exponential dependence of the growth rate vsub(g) on the ionization density was observed for amorphized and non-amorphized Si layers. No change of the activation energy Esub(a) in the used beam density range was noticed. (author)