Published October 1, 2010 | Version v1
Journal article

Co-sensitized quantum dot solar cell based on ZnO nanowire

  • 1. School of Electronic Science and Engineering, Southeast University, Sipai Lou 2, JinLing Yuan 109, Nanjing 210096 (China)
  • 2. Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Science, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
  • 3. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

Description

An efficient photoelectrode is fabricated by sequentially assembled CdS and CdSe quantum dots (QDs) onto a ZnO-nanowire film. As revealed by UV-vis absorption spectrum and scanning electron microscopy (SEM), CdS and CdSe QDs can be effectively adsorbed on ZnO-nanowire array. Electrochemical impedance spectroscopy (EIS) measured demonstrates that the electron lifetime for ZnO/CdS/CdSe (13.8 ms) is calculated longer than that of ZnO/CdS device (6.2 ms), which indicates that interface charge recombination rate is reduced by sensitizing CdSe QDs. With broader light absorption range and longer electron lifetime, a power conversion efficiency of 1.42% is achieved for ZnO based CdS/CdSe co-sensitized solar cell under the illumination of one Sun (AM 1.5G, 100 mW cm-2).

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2010.05.086

Additional details

Identifiers

DOI
10.1016/j.apsusc.2010.05.086;
PII
S0169-4332(10)00777-4;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
256
Journal Issue
24
Journal Page Range
p. 7438-7441
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.