Published July 7, 2004
| Version v1
Journal article
Theoretical analysis of field emission from metallic nanostructures on Si(100) surfaces
Creators
- 1. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
- 2. Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
Description
We have analysed effects of submonolayer aluminium adsorption on field emission from Si(100) surfaces using ab initio density functional calculations incorporating scattering states. We have clarified that the electron transfer from aluminium atoms to silicon atoms plays an important role in reducing the local barrier height in front of aluminium atoms, resulting in large emission current. We have also found that, when nanostructures having comparable minimum local barrier height are considered, the relative efficiency of field emission can be explained by the difference in the density of emission sites and the surface local density of states at the Fermi energy
Availability note (English)
Available online at http://stacks.iop.org/0953-8984/16/4685/cm4_26_004.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0953-8984/16/4685/cm4_26_004.pdf; http://www.iop.org/;
- DOI
- 10.1088/0953-8984/16/26/004;
- PII
- S0953-8984(04)77416-0;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 16
- Journal Issue
- 26
- Journal Page Range
- p. 4685-4696
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36004522
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ADSORPTION; ALUMINIUM; DENSITY FUNCTIONAL METHOD; ELECTRIC CURRENTS; ELECTRON TRANSFER; FERMI LEVEL; FIELD EMISSION; NANOSTRUCTURES; SILICON; SURFACES
- Descriptors DEC
- CALCULATION METHODS; CURRENTS; ELEMENTS; EMISSION; ENERGY LEVELS; METALS; SEMIMETALS; SORPTION; VARIATIONAL METHODS