Dependence of defect formation in n-Si on the ion mass and photoexcitation intensity under low-fluence ion implantation

Effect of photoexcitation of Si crystal electron subsystem by the ultraviolet light on the nature of accumulation of radiation defects under implantation of low doses of He+, C+, N+, O+, Ne+, Ar+ and Ge+ ions. It was shown that photoexcitation effect on defect accumulation at crystal temperature increase was amplified, dependence of secondary defect accumulation on the ion mass was nonmonotonic one, the effect essentially depended on the chemical nature of the implanted impurities and as the illumination was intensified the concentration of the secondary defects came to saturation