Published May 2015 | Version v1
Journal article

Electronic properties of orthorhombic BaSn2S5 single crystal

  • 1. New Technologies-Research Center, University of West Bohemia, Univerzitni 8, 306 14, Pilsen (Czech Republic)

Description

A theoretical investigation of the electronic structure and linear optical properties of BaSn2S5 compound is performed using the full-potential linearized augmented plane wave based on the local density approximation (LDA), generalized gradient approximation (GGA), Engel–Vosko GGA and the modified Becke–Johnson (mBJ) to solve the exchange correlation potential. The calculated energy gaps obtained using these approximations are 1.42, 1.59, 2.03 and 2.32 eV respectively. The mBJ shows very close agreement with the experimental energy gap (2.35 eV). The bond lengths of Ba–S and Sn–S are calculated, which are in good agreement with the experimental values. Bonds between Ba and S atoms show ionic nature, while polar covalent bonds between Sn and S atoms are obtained. The optical properties are calculated and discussed in detail. Both calculated and experimental absorption coefficients are comparable to each other in the mid-IR region. (author)

Additional details

Publishing Information

Journal Title
Indian Journal of Physics (Online)
Journal Volume
89
Journal Issue
5
Journal Page Range
p. 437-443
ISSN
0974-9845

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
51090745
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BAND THEORY; BARIUM COMPOUNDS; BOND LENGTHS; CRYSTAL FIELD; ELECTRONIC STRUCTURE; ENERGY GAP; MONOCRYSTALS
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; CRYSTALS; DIMENSIONS; LENGTH