Synthetical ionization irradiation effects of neutron and γ-ray on very large scale integrated circuit

The ionization irradiation effects were researched on very large scale integrated circuits (VLSI) made with CMOS technique under the neutron and γ-ray synthetical irradiation environment of a reactor. Through the experiments of the synthetical irradiation effects on different 80C196KC20 and PSD501B1 SCM (single chip microprocessor) system chips, it was found that the static current did not increase apparently. The conclusion is that under the neutron and γ-ray synthetical irradiation environment of a reactor, ionization effects of neutron on the VLSI made with CMOS technology are weak, and that the displacement effects of neutron induces the decreases of mobility ratio and density of charge carrier, which causes the decrease of the total static current, so it compensates the increase of the static current caused by the synthetical ionization effects of neutron and γ-ray. (authors)