Published April 16, 1984
| Version v1
Journal article
Low-energy implantation of arsenic in silicon
- 1. AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov
- 2. Zentralinstitut fuer Kernforschung, Rossendorf bei Dresden (German Democratic Republic)
Description
In <100> p-type silicon arsenic is implanted (dose approximately 1015 cm-2) at substrate temperatures from 20 to 8000C with an energy of 500 eV. The properties of as-implanted and annealed samples are studied using Rutherford backscattering, electron diffraction, and Van der Pauw measurements. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 82
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 475-480
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 15065441
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ARSENIC ISOTOPES; BACKSCATTERING; CARRIER MOBILITY; DEPTH; ELECTRON DIFFRACTION; EV RANGE 100-1000; ION IMPLANTATION; LAYERS; RUTHERFORD SCATTERING; SILICON; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; DIMENSIONS; DISTRIBUTION; ELASTIC SCATTERING; ELEMENTS; ENERGY RANGE; EV RANGE; HEAT TREATMENTS; MOBILITY; SCATTERING; SEMIMETALS