Published January 1983
| Version v1
Journal article
Moessbauer study of radiation effect of a heavy-current pulsed ionic beam on silicon
- 1. Moskovskij Inzhenerno-Fizicheskij Inst. (USSR)
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Мессбауэровское исследование радиационного воздействия сильноточного импульсного пучка ионов на кремний
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 17
- Journal Issue
- 1
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 181
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 14773497
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTALS; ISOMER SHIFT; MOESSBAUER EFFECT; SECONDARY EMISSION; SILICON; TIN 119; VALENCE
- Descriptors DEC
- CRYSTAL STRUCTURE; DAYS LIVING RADIOISOTOPES; ELEMENTS; EMISSION; EVEN-ODD NUCLEI; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTO; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; NUCLEI; RADIOISOTOPES; SEMIMETALS; STABLE ISOTOPES; TIN ISOTOPES
Optional Information
- Notes
- Short note. For English translation see the journal Soviet Physics - Semiconductors (USA).