Investigation of the kinetics of stationary regime establishment of silicon sputtering by oxygen ions

The initial period of secondary ion emission of silicon sputtered by monoatomic and diatomic oxygen ions is investigated. The SIMS (secondary ion mass-spectroscopy) study shows that this period involves four stages characterized by difference of the physico-chemical composition of the interface and the sample sputtering rate. It is shown that during this period the sample sputtering rate may get the negative value