Published January 11, 1988
| Version v1
Journal article
In situ resistance of Y1Ba2Cu3O/sub x/ films during anneal
Creators
- 1. IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
Description
Measurements of electrical resistance of thin films of the high-temperature superconductor Y1Ba2Cu3O/sub x/ have been carried out between 100 and 800 0C, and in the range between roughly 0.1 and 1 atm of ambient oxygen. Results are reported for both quick and slow heating, and also for sudden changes in oxygen partial pressure. At constant temperature we observe that the response to the oxygen partial pressure is both quick and reversible. We show evidence that quick heating is preferable, and we also observe features in the resistance similar to those reported in bulk samples and interpreted as an order--disorder transition of oxygen in the one-dimensional Cu-O chains
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 52
- Journal Issue
- 2
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 157-159
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19040004
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; BARIUM OXIDES; COPPER OXIDES; ELECTRIC CONDUCTIVITY; HIGH TEMPERATURE; MEDIUM TEMPERATURE; ORDER-DISORDER TRANSFORMATIONS; SUPERCONDUCTING FILMS; VERY HIGH TEMPERATURE; YTTRIUM OXIDES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; BARIUM COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; ELECTRICAL PROPERTIES; FILMS; HEAT TREATMENTS; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS