Published July 8, 1991
| Version v1
Journal article
Negative-ion desorption from insulators by electron excitation of core levels
Creators
- 1. David Sarnoff Research Center, CN 5300, Princeton, New Jersey 08543-5300 (USA)
- 2. Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855-0849 (USA)
- 3. Engineering Physics, University of Virginia, Charlottesville, Virginia 22901 (USA)
Description
We have observed the desorption of O- and Si- ions during the electron bombardment of SiO2, and have determined ion yields and kinetic-energy distributions at electron energies >100 eV. The threshold energy for the O- yield corresponds to the excitation of Si-L-shell core levels. We propose that multielectron excitations cause the ejection of positive ions or neutral atoms from the surface, and that these species can capture electrons in the surface region to form negative ions. Alternatively, the creation of superexcited electronic states of an SiO2 surface complex may lead to the ejection of O-
Additional details
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 67
- Journal Issue
- 2
- Series
- Phys. Rev. Lett.
- Journal Page Range
- 232-235
- ISSN
- 0031-9007
- CODEN
- PRLTA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22078364
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANIONS; DESORPTION; ELECTRON COLLISIONS; ENERGY SPECTRA; FILMS; KEV RANGE 01-10; OXYGEN IONS; SILICON IONS; SILICON OXIDES; THRESHOLD ENERGY
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; COLLISIONS; ENERGY; ENERGY RANGE; IONS; KEV RANGE; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SPECTRA