The influence of bombarding ions on the radiation defect formation in silicon

The dependence of radiation defects in silicon on implanted ions is studied by the deep level transient spectroscopy (DLTS) method. Roughly equal amounts with practically coinciding spatial profiles of the primary radiation defects were introduced in n- and p-Si samples by implantation of oxygen or nitrogen ions with the doses of 2 x 1011 cm-2 and energies 75 keV as well as of argon ions with the dose of 7 x 1010 cm-2 and the energy 150 keV at a substrate temperature of 300 K. Three irradiation induced levels were observed in the DLTS spectra of n-Si implanted with O+ ions and only one of them was found in the case of N+ irradiation