Nanosize structures on S++Mn-- and Sc++Mn-- molecule-formation base in silicon lattice

In the work one possible way for nanosize structure formation creation on (S++ Mn- and Se++Mn-) molecules base between impurity atoms S, Se, Mn in the silicon lattice are cited. Dependences of (S++ Mn-) molecules concentration on impurity atoms concentrations is determined. Silicon doping by Mn, S, Se atoms as well as Mn-Se, Mn-S simultaneously were carried out from gaseous phase at the same partial pressure of these impurities within temperature range T=1050-1250 deg. C for t=10-25 hours. Developed multi-stage diffusion technology provides not only completely exclude erosion of silicon surface (having place under these impurities diffusion) but also contribute to uniformly doping of sufficiently big size samples (3x1x0.5 cm3)