Metallurgical applications of ion implantation
Description
Ion implantation can be used to produce atomic mixtures of controlled composition, independent of thermodynamic constraints, and to introduce lattice damage at rates exceeding 1 dpa/sec. These unique capabilities are being exploited for the study of intermetallic alloys in two different temperature regimes. At lower temperatures, where atomic mobilities are nil, the technique is being used to investigate new metastable phases. These have included substitutional solid solutions of immiscible elements, amorphous alloys, and improved superconductors of nonequilibrium compositions. At higher temperatures, where appreciable atomic diffusion occurs over experimental times, implantation is being employed to study equilibrium alloys. Previously unavailable information about phase diagrams and diffusion rates has been obtained at much lower temperatures and in complex alloy systems
Additional details
Publishing Information
- Publisher
- Plenum Press.
- Imprint Place
- New York, NY
- Imprint Title
- Ion implantation in semiconductors, 1976
- Journal Page Range
- p. 167-177.
Conference
- Title
- Proceedings of V international conference on ion implantation in semiconductors and other materials.
- Dates
- 9 - 13 Aug 1976.
- Place
- Boulder, CO, USA.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 10481782
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COPPER ALLOYS; ION IMPLANTATION; NICKEL ALLOYS; SUPERCONDUCTIVITY; TRANSITION TEMPERATURE
- Descriptors DEC
- ALLOYS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT ALLOYS