Published 1977 | Version v1
Book

Metallurgical applications of ion implantation

Creators

  • 1. Sandia Labs., Albuquerque, NM

Description

Ion implantation can be used to produce atomic mixtures of controlled composition, independent of thermodynamic constraints, and to introduce lattice damage at rates exceeding 1 dpa/sec. These unique capabilities are being exploited for the study of intermetallic alloys in two different temperature regimes. At lower temperatures, where atomic mobilities are nil, the technique is being used to investigate new metastable phases. These have included substitutional solid solutions of immiscible elements, amorphous alloys, and improved superconductors of nonequilibrium compositions. At higher temperatures, where appreciable atomic diffusion occurs over experimental times, implantation is being employed to study equilibrium alloys. Previously unavailable information about phase diagrams and diffusion rates has been obtained at much lower temperatures and in complex alloy systems

Additional details

Publishing Information

Publisher
Plenum Press.
Imprint Place
New York, NY
Imprint Title
Ion implantation in semiconductors, 1976
Journal Page Range
p. 167-177.

Conference

Title
Proceedings of V international conference on ion implantation in semiconductors and other materials.
Dates
9 - 13 Aug 1976.
Place
Boulder, CO, USA.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
10481782
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COPPER ALLOYS; ION IMPLANTATION; NICKEL ALLOYS; SUPERCONDUCTIVITY; TRANSITION TEMPERATURE
Descriptors DEC
ALLOYS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT ALLOYS