On optimization of a technology of industrial silicon receiving and using a recrystallization for purification

There is described an optimized industrial silicon technology with a full or partial replacement of the imported carbonaceous reducing material with the natural gas. The research results showed the improved quality of the industrial silicon on the content of residual impurities in comparison with the product obtained in conventional manner. We consider the usage of the recrystallization method for the industrial silicon purification. The expression was obtained for calculating the distribution of impurities when growing the crystals by Czochralski method in the presence of impurities interaction on the surface of the melt with the reactant vapors. (author)