Published February 2017
| Version v1
Journal article
Performance improvement inpolymer-based thin film transistor using modified bottom-contact structures with etched SiO2 layers
- 1. R and D Center, Samsung Corning Precision Materials Co., Ltd, Asan (Korea, Republic of)
- 2. Dept. of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul (Korea, Republic of)
Description
Polymer-based thin film transistors (TFTs) with a modified bottom-contact structure and etched SiO2 layer were developed and investigated. An increase in the field-effect mobility in the developed TFTs compared to TFTs with a normal bottom-contact structure was ascertained. A bottom-contact structure and the photolithographic processing method were used to ensure that the developed TFTs were suitable for commercial applications. Increased mobility of the modified bottom-contact structure was attributed to direct contact of the Au electrode with the active polymer layer
Additional details
Publishing Information
- Journal Title
- Bulletin of the Korean Chemical Society
- Journal Volume
- 38
- Journal Issue
- 2
- Series
- 20 refs, 3 figs
- Journal Page Range
- p. 224-227
- ISSN
- 0253-2964
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 48049694
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- PERFORMANCE; POLYMERS; SILICON OXIDES; THIN FILMS; USES
- Descriptors DEC
- CHALCOGENIDES; FILMS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS