Published November 1988 | Version v1
Journal article Metadata-only

Effect of the composition of solid solutions on the conditions of coherent growth of GaxIn1-xAsyP1-y epitaxial layers

Creators

  • 1. Gor'kovskij Gosudarstvennyj Univ., Gorki (USSR). Issledovatel'skij Fiziko-Tekhnicheskij Inst.
  • 2. Gosudarstvennyj Nauchno-Issledovatel'skij i Proektnyj Inst. Redkometallicheskoj Promyshlennosti, Moscow (USSR)

Description

Stress state and dislocation structure of GaxIn1-xAsyP1-y epitaxial layers, grown on InP(001) substrates, are investigated by means of X-ray topography and diffractometry and optical microscopy. The effect of solid solution composition, noncorrespondence of lattice periods, layer thickness and dislocation density in substrate on coherent growth conditions, change of stress state and generation of noncorrespondence dislocations and inclined dislocations in epitaxial layers is investigated. Possible mechanisms and peculiarities of dislocation generation in GaxIn1-xAsyP1-y epitaxial layers an analyzed

Additional details

Additional titles

Original title (Russian)
Влияние состава твердых растворов на условия когерентного роста эпитаксиальных слоев Га

Publishing Information

Journal Title
Kristallografiya
Journal Volume
33
Journal Issue
6
Series
Kristallografiya.
Journal Page Range
1469-1477
ISSN
0023-4761
CODEN
KRISA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
20053747
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DISLOCATIONS; EPITAXY; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HIGH TEMPERATURE; INDIUM PHOSPHIDES; LATTICE PARAMETERS; LAYERS; QUANTITY RATIO; SOLID SOLUTIONS; STRAINS; TEMPERATURE DEPENDENCE; THICKNESS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; DISPERSIONS; GALLIUM COMPOUNDS; HOMOGENEOUS MIXTURES; INDIUM COMPOUNDS; LINE DEFECTS; MIXTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; SOLUTIONS