Published 2009 | Version v1
Miscellaneous

Giant magnetoresistance and magnetothermopower in single-crystal Bi1-xSbx wires

  • 1. International Lab. of High Magnetic Fields and Low Temperatures, Wroclaw (Poland)
  • 2. Inst. of Electronic Engineering and Industrial Technologies, Academy of Sciences of Moldova, Chisinau (Moldova, Republic of)

Description

A significant increase in the transverse magnetoresistance and magnetothermopower in single-crystal Bi1-xSbx wires obtained by liquid phase casting in the temperature range 80-100 K is found. A shift to the range of lower (T < 80 K) or higher (T > 100 K) temperatures leads to the suppression of the giant increase in the magnetoresistance. The effect is interpreted in terms of the substance transition to the 'gapless state'. According to the theoretical analysis of, the disappearance of the energy gap between the bands Eg is accompanied by a significant increase in mobility that leads to a sharp increase in the magnetoresistance; herein, the gapless state corresponds to the mobility maximum. While moving from the state with Eg = 0, the mobility decrease. (authors)

Part of:
ICMCS-2009: 6. international conference on microelectronics and computer science. Proceedings

Additional details

Publishing Information

Publisher
Technical University of Moldova
Imprint Place
Chisinau (Moldova, Republic of)
ISBN
978-9975-45-045-4; 978-9975-45-122-2
Imprint Title
ICMCS-2009: 6. international conference on microelectronics and computer science. Proceedings
Imprint Pagination
524 p.
Journal Page Range
p. 171-174
Report number
INIS-MD--010

Conference

Title
6. international conference on microelectronics and computer science
Acronym
ICMCS-2009
Dates
1-3 Oct 2009
Place
Chisinau (Moldova, Republic of)

INIS

Country of Publication
Moldova, Republic of
Country of Input or Organization
Moldova, Republic of
INIS RN
42091515
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Non-conventional Literature
Descriptors DEI
ANTIMONY COMPOUNDS; BISMUTH COMPOUNDS; ELECTRIC CONDUCTIVITY; ENERGY GAP; MAGNETIC FIELDS; MAGNETORESISTANCE; MOBILITY; MONOCRYSTALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; THERMOELECTRIC PROPERTIES; WIRES
Descriptors DEC
CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES; TEMPERATURE RANGE

Optional Information

Notes
18 refs., 3 figs.