Giant magnetoresistance and magnetothermopower in single-crystal Bi1-xSbx wires
- 1. International Lab. of High Magnetic Fields and Low Temperatures, Wroclaw (Poland)
- 2. Inst. of Electronic Engineering and Industrial Technologies, Academy of Sciences of Moldova, Chisinau (Moldova, Republic of)
Description
A significant increase in the transverse magnetoresistance and magnetothermopower in single-crystal Bi1-xSbx wires obtained by liquid phase casting in the temperature range 80-100 K is found. A shift to the range of lower (T < 80 K) or higher (T > 100 K) temperatures leads to the suppression of the giant increase in the magnetoresistance. The effect is interpreted in terms of the substance transition to the 'gapless state'. According to the theoretical analysis of, the disappearance of the energy gap between the bands Eg is accompanied by a significant increase in mobility that leads to a sharp increase in the magnetoresistance; herein, the gapless state corresponds to the mobility maximum. While moving from the state with Eg = 0, the mobility decrease. (authors)
Additional details
Publishing Information
- Publisher
- Technical University of Moldova
- Imprint Place
- Chisinau (Moldova, Republic of)
- ISBN
- 978-9975-45-045-4; 978-9975-45-122-2
- Imprint Title
- ICMCS-2009: 6. international conference on microelectronics and computer science. Proceedings
- Imprint Pagination
- 524 p.
- Journal Page Range
- p. 171-174
- Report number
- INIS-MD--010
Conference
- Title
- 6. international conference on microelectronics and computer science
- Acronym
- ICMCS-2009
- Dates
- 1-3 Oct 2009
- Place
- Chisinau (Moldova, Republic of)
INIS
- Country of Publication
- Moldova, Republic of
- Country of Input or Organization
- Moldova, Republic of
- INIS RN
- 42091515
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- ANTIMONY COMPOUNDS; BISMUTH COMPOUNDS; ELECTRIC CONDUCTIVITY; ENERGY GAP; MAGNETIC FIELDS; MAGNETORESISTANCE; MOBILITY; MONOCRYSTALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; THERMOELECTRIC PROPERTIES; WIRES
- Descriptors DEC
- CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES; TEMPERATURE RANGE
Optional Information
- Notes
- 18 refs., 3 figs.