Optical properties of quaternary GaMnAsP thin layer grown by molecular beam epitaxy

In this study, ellipsometry measurement have been used to investigate optical properties of GaMnAsP/GaAs structure. Within the framework of the three-layer model we have estimated, for the first time, the linear and nonlinear optical parameters of GaMnAsP/GaAs structure. In fact, the structure under study is considered as strongly absorbing material in the visible range with low loss factor dissipation and reveals high optical conductivity behavior. The capacitive optical response shows that the inspected material can be very useful in energy storage applications. The theoretically predicted parameters of the nonlinear refractive index $n_2$ and nonlinear susceptibility ${\chi }^{\left(3\right)}$ of the material indicate that GaMnAsPlayer grown on GaAs can be adapted for nonlinear optoelectronic applications area. Our study shows that the GaMnAsP layer will be useful for optoelectronic applications.