Published October 1972 | Version v1
Journal article Metadata-only

Anisotropy of electrical properties of (Te, In, Pb)-doped Bi2Se3 single crystals

Creators

  • 1. Chernovitskij Gosudarstvennyj Univ. (Ukrainian SSR)

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
Анизотропия электрических свойств легированных (Те, Ин, Пб) монокристаллов Bi2Se3

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
6
Journal Issue
10
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
2042-2044

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
4057673
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANISOTROPY; BISMUTH COMPOUNDS; CARRIER DENSITY; CARRIER MOBILITY; CRYSTAL DOPING; ELECTRIC CONDUCTIVITY; HALL EFFECT; HIGH TEMPERATURE; IMPURITIES; INDIUM; LEAD; LOW TEMPERATURE; MEDIUM TEMPERATURE; MONOCRYSTALS; SELENIDES; TELLURIUM; TEMPERATURE DEPENDENCE
Descriptors DEC
CRYSTALS; ELECTRICAL PROPERTIES; ELEMENTS; METALS; MOBILITY; PHYSICAL PROPERTIES; SEMIMETALS

Optional Information

Notes
For English translation see the journal Sov. Phys.-Semicond.