Published 1985
| Version v1
Report
Restricted
Circuit approaches to increasing SRAM performance in total dose environments
Description
Performance degradation of CMOS SRAM circuits in total dose environments has been studied by computer simulations. Different failure modes are discussed and new approaches for performance improvements are presented
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS, PC A02/MF A01 as DE85009441.
Files
Restricted
The record is publicly accessible, but files are restricted to users with access.
Additional details
Publishing Information
- Imprint Pagination
- 6 p.
- Report number
- SAND--85-7182C
Conference
- Title
- 22. annual conference on nuclear and space radiation effects.
- Dates
- 22-24 Jul 1985.
- Place
- Monterey, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 17003795
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COMPUTERIZED SIMULATION; RADIATION HARDENING; SEMICONDUCTOR STORAGE DEVICES
- Descriptors DEC
- HARDENING; MEMORY DEVICES; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SIMULATION
Optional Information
- Secondary number(s)
- CONF-850711--6.