Published 1987 | Version v1
Book

Composition oxidation and chemical etching properties of a new amorphous silicon-boron thin film

  • 1. Dept. of Physics, The Univ. of Western Ontario, London, Ontario (Canada)

Description

When silane, with more than 0.1% of diborane in the gas mixture, are co-pyrolyzed at temperatures below 5400C, an amorphous silicon-boron alloy is formed. The composition of the solid film was determined by SIMS and Auger spectroscopy. The amorphous nature of the films was established by X-ray diffraction, laser Raman spectroscopy, and TEM electron diffraction. Electrical and optical properties of this material are reported. Oxidation and chemical etching of this material were also studied

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
0-931837-62-6
Imprint Title
Amorphous silicon semiconductors-pure and hydrogenated
Journal Page Range
p. 191-196.

Conference

Title
Materials Research Society symposium on amorphous silicon semiconductors, pure and hydrogenated.
Dates
21-24 Apr 1987.
Place
Anaheim, CA (USA).