Published August 2005
| Version v1
Journal article
Structural studies of the Ge-Se-Bi system
- 1. Faculty of Education, Seyoun Hadramout Univ. for Science and Technology, Seyoun (Yemen)
- 2. Dept. of Physics, College of Science, Univ. of Baghdad, Jadira, Baghdad, (Iran, Islamic Republic of)
Description
A study of the effect of bismuth dopant on the structural properties of Ge33 Se67-x Bix. )x=0,5.10,15 and 20) semiconductor system of X-ray diffraction analysis is presented. The measurement shows that the system consists of crystals of Bi2Se3. At large concentration of Bi (x>10%) it implies a change in the number of Bi2Se3 crystals. No evidence for the Ge-Bi bond was found. X-ray analysis of thin deposited films of the G233Se67-xBix systems shows that they are amorphous for all values of x. (author)
Additional details
Publishing Information
- Journal Title
- University of Aden Journal of Natural and Applied Sciences
- Journal Volume
- 9
- Journal Issue
- 2
- Journal Page Range
- p. 399-403
- ISSN
- 1606-8947
INIS
- Country of Publication
- Yemen
- Country of Input or Organization
- Yemen
- INIS RN
- 37046745
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- BISMUTH COMPOUNDS; CRYSTAL DOPING; EXPERIMENTAL DATA; GERMANIUM COMPOUNDS; SELENIUM 67; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-PLUS DECAY RADIOISOTOPES; COHERENT SCATTERING; DATA; DIFFRACTION; EVEN-ODD NUCLEI; FILMS; INFORMATION; INTERMEDIATE MASS NUCLEI; ISOTOPES; MILLISECONDS LIVING RADIOISOTOPES; NUCLEI; NUMERICAL DATA; RADIOISOTOPES; SCATTERING; SELENIUM ISOTOPES
Optional Information
- Notes
- 10 refs., 1 fig., 2tabs.