Development of topological insulator and topological crystalline insulator nanostructures
- 1. Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, OH 44106 (United States)
- 2. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)
Description
Topological insulators (TIs), a class of quantum materials with time reversal symmetry protected gapless Dirac-surface states, have attracted intensive research interests due to their exotic electronic properties. Topological crystalline insulators (TCIs), whose gapless surface states are protected by the crystal symmetry, have recently been proposed and experimentally verified as a new class of TIs. With high surface-to-volume ratio, nanoscale TI and TCI materials such as nanowires and nanoribbons can have significantly enhanced contribution from surface states in carrier transport and are thus ideally suited for the fundamental studies of topologically protected surface state transport and nanodevice fabrication. This article will review the synthesis and transport device measurements of TIs and TCIs nanostructures. (topical review)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6528/ab6dfcAdditional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 31
- Journal Issue
- 19
- Journal Page Range
- [17 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53028746
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTALS; NANOWIRES; SURFACES; SYNTHESIS
- Descriptors DEC
- NANOSTRUCTURES