Published May 8, 2020 | Version v1
Journal article

Development of topological insulator and topological crystalline insulator nanostructures

  • 1. Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, OH 44106 (United States)
  • 2. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

Description

Topological insulators (TIs), a class of quantum materials with time reversal symmetry protected gapless Dirac-surface states, have attracted intensive research interests due to their exotic electronic properties. Topological crystalline insulators (TCIs), whose gapless surface states are protected by the crystal symmetry, have recently been proposed and experimentally verified as a new class of TIs. With high surface-to-volume ratio, nanoscale TI and TCI materials such as nanowires and nanoribbons can have significantly enhanced contribution from surface states in carrier transport and are thus ideally suited for the fundamental studies of topologically protected surface state transport and nanodevice fabrication. This article will review the synthesis and transport device measurements of TIs and TCIs nanostructures. (topical review)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6528/ab6dfc

Additional details

Identifiers

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
31
Journal Issue
19
Journal Page Range
[17 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53028746
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTALS; NANOWIRES; SURFACES; SYNTHESIS
Descriptors DEC
NANOSTRUCTURES