Published December 1, 1991 | Version v1
Journal article Metadata-only

Evidence of chemical-potential shift with hole doping in Bi2Sr2CaCu2O8+δ

Creators

  • 1. Stanford Electronics Laboratory, Stanford University, Stanford, California 94305 (United States)
  • 2. Ames Laboratory, Iowa State University, Ames, Iowa 50011 (United States)
  • 3. Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)
  • 4. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

Description

We have performed photoemission studies on high-quality Bi2Sr2CaCu2O8+δ samples with various δ. Our results show a clear chemical-potential shift (0.15--0.2 eV) as a function of doping. This result and the existing angle-resolved-photoemission data give a rather standard doping behavior of this compound in its highly doped regime

Additional details

Publishing Information

Journal Title
Physical Review. B, Condensed Matter
Journal Volume
44
Journal Issue
21
Journal Page Range
p. 12098-12101.
ISSN
0163-1829
CODEN
PRBMDO

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
24018580
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BISMUTH OXIDES; CALCIUM OXIDES; COPPER OXIDES; ELECTRONIC STRUCTURE; FERMI LEVEL; HIGH-TC SUPERCONDUCTORS; HOLES; MONOCRYSTALS; PHOTOEMISSION; STRONTIUM OXIDES
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; BISMUTH COMPOUNDS; CALCIUM COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; CRYSTALS; EMISSION; ENERGY LEVELS; OXIDES; OXYGEN COMPOUNDS; SECONDARY EMISSION; STRONTIUM COMPOUNDS; SUPERCONDUCTORS; TRANSITION ELEMENT COMPOUNDS