Published September 16, 2002
| Version v1
Journal article
Dependence of physical properties and giant magnetoresistance ratio on substrate position during rf sputtering of NiO and α-Fe2O3 for bottom spin valves
- 1. Magnetic Materials Group, NIST, Gaithersburg, Maryland 20899 (United States)
- 2. Center for Micromagnetics and Information Technologies (MINT), University of Minnesota, Department of Electrical and Computer Engineering, Minneapolis, Minnesota 55455 (United States)
Description
The dependence of composition, crystalline orientation texture, surface roughness, and giant magnetoresistance (GMR) ratio on substrate position during rf reactive sputtering of antiferromagnetic NiO and α-Fe2O3 films for dc magnetron sputtered Co/Cu/Co bottom spin valves have been investigated. For substrate positions from the center to edge of the target, the GMR ratio increased from 13.5% to 19.8% for NiO and from 9.8% to 13% for α-Fe2O3. These significant enhancements of GMR ratio was found to correlate with a decrease of surface roughness, increase in crystalline texture, and a nearly bulk stoichiometry of the NiO and α-Fe2O3 thin films
Additional details
Identifiers
- DOI
- 10.1063/1.1508161;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 81
- Journal Issue
- 12
- Journal Page Range
- p. 2208-2210
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35017722
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANTIFERROMAGNETIC MATERIALS; IRON OXIDES; MAGNETORESISTANCE; NICKEL OXIDES; RF SYSTEMS; SPIN; SPUTTERING; STOICHIOMETRY; SURFACES; TEXTURE; THIN FILMS; TOPOGRAPHY; VALVES
- Descriptors DEC
- ANGULAR MOMENTUM; CHALCOGENIDES; CONTROL EQUIPMENT; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EQUIPMENT; FILMS; FLOW REGULATORS; IRON COMPOUNDS; MAGNETIC MATERIALS; MATERIALS; NICKEL COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2002 American Institute of Physics.