Published September 16, 2002 | Version v1
Journal article

Dependence of physical properties and giant magnetoresistance ratio on substrate position during rf sputtering of NiO and α-Fe2O3 for bottom spin valves

  • 1. Magnetic Materials Group, NIST, Gaithersburg, Maryland 20899 (United States)
  • 2. Center for Micromagnetics and Information Technologies (MINT), University of Minnesota, Department of Electrical and Computer Engineering, Minneapolis, Minnesota 55455 (United States)

Description

The dependence of composition, crystalline orientation texture, surface roughness, and giant magnetoresistance (GMR) ratio on substrate position during rf reactive sputtering of antiferromagnetic NiO and α-Fe2O3 films for dc magnetron sputtered Co/Cu/Co bottom spin valves have been investigated. For substrate positions from the center to edge of the target, the GMR ratio increased from 13.5% to 19.8% for NiO and from 9.8% to 13% for α-Fe2O3. These significant enhancements of GMR ratio was found to correlate with a decrease of surface roughness, increase in crystalline texture, and a nearly bulk stoichiometry of the NiO and α-Fe2O3 thin films

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
81
Journal Issue
12
Journal Page Range
p. 2208-2210
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2002 American Institute of Physics.