Study of defect formation processes in implanted structures under epitaxial film growth

Results of investigation into irradiation dose effect on defect formation processes in argon-implanted Si structures during epitaxial film growth are given. Existence of three characteristic zones of implantation doses, which different types of epitaxial film defects correspond to, is shown. It is also shown on the basis of calculational and experimental data that increase of planar gettering length at doses >or approx. 5x1015 cm-2 results from appearance of intergranular boudaries and depends on elastic interactions between point defects, dislocation loops and intergranular boundaries