Published October 2011 | Version v1
Journal article

Electronic structure of In2O3 nanowires synthesized at low temperature

  • 1. Institute of Functional Nano and Soft Materials, and Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices, Soochow University, Suzhou (China)
  • 2. Shanghai Institute of Applied Physics, Chinese Academy of Sciences (China)

Description

In2O3 nanowires with uniform morphology and single crystalline structure were synthesized at low temperature of 400 degree C 450 degree C using InSb as the precursor via VLS mechanism. The nanowires have uniform diameter of about 40 nm and are up to tens of micrometers in length and grew along the [100] direction as established by high resolution electron microscopy. The electronic and local structures of In2O3 nanowires,compared to that of In2O3 powder, have been studied with X-ray absorption fine structure (XAFS) at In K-edge and O K-edge. The XAFS results reveal the stronger In-O bonding in In2O3 nanowires compared to bulk In2O3. (authors)

Additional details

Publishing Information

Journal Title
Nuclear Science and Techniques
Journal Volume
22
Journal Issue
5
Journal Page Range
p. 272-276
ISSN
1001-8042

Optional Information

Notes
6 figs., 25 refs.